Key features organization ddr21066 777 package 128mx8 k4t1g084qf bcf8 60 fbga 64mx16 k4t1g164qf bcf8 84 fbga speed ddr21066 777 units cas latency 7 tck trcdmin. K4t1g164qfbce6 electronic distributor k4t1g164qfbce6 at y. Offer k4t1g164qf bcf8 samsung from kynix semiconductor hong kong limited. The 4gb ddr3 sdram qdie is organized as a 32mbit x 16 ios x 8banks, device. Buy k4t1g164qf bcfb samsung, view the manufacturer, and stock, and datasheet pdf for the k4t1g164qf bcfb at jotrin electronics. This is mainly because this is an active product used on most of the. The chip is designed to comply with the following key ddr3 sdram fea. Its primary purpose is to provide high performance whilst reducing power consumption by operating at extremely low voltage levels. K4t1g164qfbcf8 samsung ic chips kynix semiconductor. Samsung, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.
K4t1g164qfbcf8 datasheet, k4t1g164qfbcf8 pdf, k4t1g164qfbcf8 data sheet. K4t1g164qfbie7 samsung integrated circuits ics jotrin. There is a bsl sample test code available for ddr used on omapl8 lcdk and omapl8 logic pd evm. Resolved sdtimr1 write to read command delay processors. This synchronous device achieves high speed doubledatarate transfer rates of up to 1066mbsecpin. S ilicon n ch annel m os fet f e a tu re s 24 a, 500 v,r d s on. Preliminary 4gb qdie ddr3l sdram olny x16 96fbga with lead. Frequency load current irms of fundamental for both. Pins b3 and a2 have identical capacitances as pins b7 and a8.
Find the pdf datasheet, specifications and distributor information. K4t1g164qfbcf8 datasheet, k4t1g164qf bcf8 pdf, k4t1g164qfbcf8 data sheet, k4t1g164qf bcf8 manual, k4t1g164qf bcf8 pdf, k4t1g164qf bcf8, datenblatt, electronics. Recommended pcb layout with holes 0,85 0,85 7 1,35 0,05 1,9 1,9 1,4 3,5 2 2 1,2 4,05 4,2 1,2 5,8 a c 1 24 3 o areas important for switch stability on pcb top view. The chip is designed to comply with the following key ddr2 sdram fea. Units conditions qg total gate charge turnon 98 147 ic 20a qge gate emitter charge turnon 12 18 nc vcc 400v see fig. Ie2 2pole size 280m 90kw 50 hz 101kw 60 hz 3 ac 50 hz 400 vd690 vy 3 ac. The 1gb ddr2 sdram is organized as a 16mbit x 8 ios x 8banks or 8mbit x 16 ios x 8 banks device. Product data sheet 6gk50041bd001ab2 allied electronics. This process, which uses feature sizes approaching those of lsi.
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